Why Can SiC Outperform Si in Power Applications?

Although silicon is the most widely used semiconductor in electronics, silicon is beginning to show some limitations, especially in high-power applications. A relevant factor in these applications is the band gap or energy gap provided by the semiconductor. Silicon carbide (SiC) is a semiconductor compound composed of silicon (Si) and carbon (C) and belongs to the wide band gap (WBG) family of materials. Its physical bonds are very strong, giving semiconductors high mechanical, chemical and thermal stability. The wide band gap and high thermal stability allow SiC devices to be used at higher junction temperatures than silicon, even exceeding 200°C. When the bandgap is higher, the electronics it uses can be smaller, run faster, and be more reliable. It can also operate at higher temperatures, voltages and frequencies than other semiconductors. The band gap of silicon is about 1.12eV, while that of silicon carbide is about 3.26eV, which is almost three times that.