Silicon Carbide Addition Method

The Central Plains Inner Equipment Group once used 5000kg medium-frequency induction electric furnace as an example. The furnace material ratio: 30%of waste steel, 70%of the return furnace, no alloy elements, iron water outlet temperature 1500-1540 ° C. Under the same casting process, by ensuring the stability and consistency of other element content, a certain percentage of silicon carbide is added. The amount of silicon carbide in each furnace must be determined by the following three methods.

Option 1: The melting is added to the surface of the iron liquid.

Option 2: Add to the transit package.

Option 3: Add with iron dandruff.

Through the test of the three schemes, it was found that the plan 3 was added to the electric furnace with the iron dandruff. The absorption rate of silicon carbide was the highest and can reach more than 90%. After the electric furnace is melted, add it directly to the surface of the electric furnace. After about 10 minutes, the silicon carbide is gathered on the surface of the electric furnace iron liquid, becoming red, and it is not completely absorbed by the iron liquid. It has become an electric furnace excretion of impurities, resulting in a low absorption rate of silicon carbide; Site 2 adds silicon carbide to the transit package, and then pour the iron liquid. , So that the silicon carbide is uniformly dispersed into the iron fluid, but when the iron liquid is static in the bag, a large amount of silicon carbide surface surface has surfaced, forming a residue unable to absorb: the scheme 3 is added to the electric furnace with the iron dandruff, carbonization is carbonized, and the carbonization is carbonized. In addition to the silicon in the melting furnace, the silicon is also performed. The deoxidation effect of silicon carbide enables the deoxidation product to have a series of metallurgical reactions in the iron liquid, reduce the harmful effects of oxide in the rust furnace, and effectively purify the iron liquid, thereby increasing the absorption of silicon carbide.